The effect of morphology on electron field-effect mobility in disordered C60 thin-films

We present a model of polycrystallineC60field-effecttransistors (FETs) that incorporates the microscopic structural and electronic details of theC60films. We generatedisorderedpolycrystallinethinfilmsby simulating the physical-vapor deposition process. We simulateelectronhopping transport using a Monte Carlo method and electronic structure calculations. Our model reproduces experimentally observed FET characteristics, including electrical characteristics, electrochemical potentials, and charge mobilities. Our results suggest that even relativelydisorderedfilmshave charge mobilities that are only a factor of 2 smaller than mobilities in single crystals.